BAV 99T E6327

Overview

The BAV99T E6327 is a dual common cathode small-signal switching diode manufactured by Infineon Technologies. It utilizes silicon planar technology and is housed in an SOT-23-3 surface-mount package. The device features a peak reverse voltage of 80 V, a forward current of 200 mA, and a typical reverse recovery time of 4 ns. Power dissipation is rated at 250 mW, with an operating temperature range from -65°C to +150°C. It holds AEC-Q100 qualification for automotive applications.

Feature Summary

• Dual common cathode configuration for series pair applications
• High-speed switching capability with nanosecond recovery times
• Automotive-grade reliability through AEC-Q100 qualification

Applications

• High-speed signal switching circuits
• Automotive electronics systems
• General purpose rectification tasks

Procurement Notes

Verify the specific suffix 'E6327' against official Infineon documentation to confirm tape-and-reel packaging specifications and orientation markings. Ensure that the selected component meets the required AEC-Q100 standards if deployed in automotive environments. Cross-reference the part number with authorized distributors to confirm availability status and lead times prior to finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring fast switching speeds and compact surface-mount integration. The dual common cathode arrangement simplifies board layout compared to discrete single diodes. Consider the 80 V reverse voltage rating and 200 mA forward current limits to ensure adequate headroom for the intended application's electrical demands.

Part Context

This component belongs to Infineon's BAV series of small-signal switching diodes. These devices are engineered for high-frequency operations and are widely used in consumer electronics and industrial control systems. The E6327 suffix denotes a specific manufacturing lot or packaging variant within the broader product family.

Replacement Considerations

BAV99S-E6327