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The BAV170 is a dual surface mount low leakage diode manufactured by Diodes Incorporated. It features a peak repetitive reverse voltage of 85 V and a working peak reverse voltage of 85 V. The device supports a forward continuous current of 215 mA for a single diode configuration. Electrical characteristics include a maximum reverse recovery time of 3.0 µs and a total capacitance of 2 pF at 0 V reverse bias. The component operates within a temperature range of -55 to +150 °C.
Verify the specific ordering suffix against official documentation, as packaging quantities vary between standard and automotive grades. Confirm that the selected variant meets the required change control standards if intended for automotive use. Ensure compliance with applicable environmental directives before finalizing procurement orders.
Select this component when low leakage current and fast switching are required in a compact SOT23 package. Consider the BAV170Q variant for automotive applications necessitating AEC-Q101 qualification and PPAP capability. Evaluate thermal resistance and power dissipation limits relative to the expected ambient operating conditions.
This part belongs to the BAV series of dual surface mount low leakage diodes produced by Diodes Incorporated. The series offers various configurations optimized for general purpose switching and signal processing tasks. The BAV170 specifically provides a balance of low leakage and moderate current handling capabilities.
BAV170-7-F
The maximum reverse recovery time is 3.0 µs under test conditions of IF = IR = 10mA.
Yes, the BAV170Q variant is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
The typical total capacitance is 2 pF measured at 0 V reverse bias and 1.0 MHz frequency.