BAV199HYFHT116

BAV199HYFHT116

$0.37
  • Description:DIODE ARRAY GP 80V 215MA SOT23
  • Series:-

SKU:8040ca79bcfb Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 80V 215MA SOT23
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):3 µs
  • Current - Reverse Leakage @ Vr:5 nA @ 75 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:Automotive
  • Qualification:AEC-Q101

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BAV199HYFHT116

Overview

The BAV199HYFHT116 is a low-leakage series-connected switching diode manufactured by ROHM Semiconductor. It features an 80V reverse voltage rating and a 215mA average forward current capability within a compact SOT-23 surface-mount package. The device is designed for high-reliability applications, holding AEC-Q101 automotive qualification. Key electrical characteristics include a maximum forward voltage of 1.25V at 150mA and a peak reverse recovery time of 2 microseconds. It operates reliably across a temperature range from -65°C to +150°C with a power dissipation rating of 250mW.

Feature Summary

  • Series-connected dual diode configuration optimized for low leakage current performance.
  • Automotive-grade reliability certified under the AEC-Q101 standard.
  • High thermal stability supporting operation up to a junction temperature of 150°C.

Applications

  • General-purpose switching circuits requiring low reverse leakage.
  • Automotive electronic systems demanding high reliability.
  • Signal processing applications utilizing series diode configurations.

Procurement Notes

Verify the specific suffix HT116 against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the selected variant matches the required 80V reverse voltage rating for the intended circuit design. Cross-reference the AEC-Q101 certification status directly with the manufacturer's datasheet to validate automotive suitability before integration into production schedules.

Selection Notes

Select this component when low reverse leakage current is critical for signal integrity in switching applications. The series connection internal structure distinguishes it from parallel configurations, offering specific voltage handling capabilities. Consider the SOT-23 footprint constraints and the 250mW power dissipation limit during thermal management planning for dense PCB layouts.

Part Context

This part belongs to the BAV199HYFH series of low-leakage switching diodes produced by ROHM Semiconductor. The series is engineered for robust performance in environments requiring strict leakage control. The HYF designation typically indicates specific packaging and reel configurations within the broader product family, ensuring compatibility with standard automated assembly processes.

Replacement Considerations

The BD5211G-1 is listed as a similar level replacement with the same pinout for voltage detector functions, though application compatibility must be verified. Direct substitution requires confirming that the alternative component meets the 80V reverse voltage and 215mA current requirements while maintaining the SOT-23 package form factor.

BAV199HYFHT116BAV199HYFHT116
$0.37
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