BAV199HYT116

Overview

The BAV199HYT116 is a low-leakage switching diode manufactured by ROHM Semiconductor, housed in an SOT-23 (SSD3) surface-mount package. It features a series-connected dual-diode configuration with a maximum repetitive peak reverse voltage of 80V and a DC reverse voltage rating of 75V. The device supports an average rectified forward current of 215mA and a non-repetitive peak forward surge current of 4A. Key electrical characteristics include a forward voltage of 1.25V at 150mA, a reverse current of 0.005µA at 75V, and a reverse recovery time of 3000ns at 10mA. It operates within a junction temperature range up to 150°C and dissipates 250mW.

Feature Summary

• Low reverse leakage current for improved signal integrity
• High reliability construction with small mold type packaging
• Suitable for general-purpose switching applications

Applications

• General-purpose signal switching circuits
• Low-leakage rectification tasks
• Electronic equipment requiring standard-grade diodes

Procurement Notes

Verify the specific suffix T116 against official ROHM documentation to confirm reel quantity and tape specifications. Ensure the application does not involve automotive environments, as this standard-grade component is explicitly not recommended for vehicle use. Cross-reference the SSD3 package dimensions with PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component when low reverse leakage is critical for circuit performance. The 80V rating provides adequate margin for many low-voltage logic and signal lines. Consider the 3000ns recovery time; it is slower than high-speed variants like the BAV99, making it less suitable for high-frequency RF switching but appropriate for lower-speed digital control or audio applications.

Part Context

This part belongs to ROHM's BAV199HY series of low-leakage switching diodes. It shares the same pinout and package form factor as other members of the family, such as the BAV99HYT116, though electrical parameters differ significantly regarding reverse voltage and leakage. It serves as a specialized alternative to standard silicon switching diodes where minimal off-state current is required.

Replacement Considerations

BAV99HYT116 offers similar packaging but higher speed and different voltage ratings. BAW156HYT116 provides common-anode configuration with ultra-low leakage. Verify pin compatibility and thermal limits when substituting.