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The BAV200-GS08 is a silicon epitaxial planar switching diode from Vishay General Semiconductor, housed in the QuadroMELF (SOD-80) surface-mount package. It features a maximum repetitive peak reverse voltage of 60 V and a continuous forward current rating of 250 mA. The device exhibits a maximum reverse recovery time of 50 ns and a typical capacitance of 1.5 pF at 0 V and 1 MHz. Operating junction temperatures range from -65 °C to +175 °C.
Verify the specific GS08 packaging code corresponds to 2.5K units per 7-inch reel before ordering. Confirm that the 60 V reverse voltage rating aligns with the circuit requirements, as this part belongs to a family with higher voltage variants. Ensure compliance with RoHS3 material categorization standards required by the target assembly process.
Select the BAV200-GS08 when a 60 V reverse voltage rating is sufficient for the application. Consider the BAV201, BAV202, or BAV203 if higher breakdown voltages are necessary while maintaining identical package dimensions and thermal characteristics. Evaluate the 500 mW power dissipation limit against expected operating currents to ensure safe junction temperature margins.
This component is part of the BAV200 series of small signal switching diodes manufactured by Vishay Semiconductors. The series includes variants differentiated primarily by their maximum repetitive peak reverse voltage ratings. All members share the same SOD-80 footprint and electrical characteristics regarding forward current and recovery speed.
BAV200-GS18 serves as an alternative tape and reel variant within the same product line.