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The BAV21W-G RHG is a small signal switching diode manufactured by Taiwan Semiconductor Corporation. It features a single silicon junction in an SOD-123 surface-mount package. Key electrical parameters include a maximum DC reverse voltage of 200 V and a forward current rating of 200 mA. The device exhibits a reverse recovery time of 50 ns, with a typical forward voltage of 1.25 V at 200 mA. Reverse leakage current is specified as 100 nA at 200 V. Junction capacitance is 5 pF at 0 V bias and 1 MHz frequency. Operating temperature ranges from -65°C to +150°C.
Verify the specific suffix RHG against official Taiwan Semiconductor documentation to confirm exact tape-and-reel specifications and marking codes. Ensure compatibility with standard SOD-123 footprint designs. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before final procurement integration.
Select this component when a compact, high-voltage switching diode is required for surface-mount designs. The SOD-123 package offers space efficiency compared to leaded alternatives. Consider the 200 mA current limit and 50 ns speed for appropriate circuit timing requirements. Verify thermal management needs for the specific application environment.
This part belongs to the BAV21W series of small signal switching diodes. It serves as a surface-mount alternative to traditional leaded packages like DO-35. The device utilizes planar technology for reliable performance in general-purpose electronic applications requiring fast switching characteristics.
Cross-reference with other manufacturers' BAV21 equivalents such as Nexperia or Vishay variants. Verify pinout compatibility and ensure electrical parameters meet or exceed the original design requirements. Check package dimensions for mechanical fit.