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The BAV21W-HE3-08 is a high-voltage silicon epitaxial planar switching diode manufactured by Vishay General Semiconductor - Diodes Division. It operates within a continuous reverse voltage range of up to 200 V and a repetitive peak reverse voltage of 250 V. The device supports a DC forward current of 250 mA, an average rectified current of 200 mA, and a surge forward current of 1 A. Electrical characteristics include a maximum forward voltage of 1.25 V at 200 mA, a leakage current of 100 nA at 200 V, and a reverse recovery time of 50 ns. It is housed in an SOD-123 package with a thermal resistance of 375 °C/W and functions across an operating temperature range of -55 °C to +150 °C.
Verify the specific HE3 suffix confirms AEC-Q101 automotive qualification status. Confirm the -08 packaging code matches the required 3K reel specification. Ensure the component meets RoHS compliance requirements for the intended assembly process. Validate that the SOD-123 footprint aligns with the design layout constraints.
Select this component when a high-voltage rating of 200 V is required alongside fast switching speeds. The AEC-Q101 qualification makes it suitable for automotive environments where reliability is critical. Consider the SOD-123 package size for space-constrained surface-mount designs requiring robust surge handling capabilities.
This part belongs to the BAV21W series of small signal switching diodes designed for high-voltage applications. The series utilizes silicon epitaxial planar technology to ensure consistent performance. The HE3 variant specifically denotes RoHS compliance combined with automotive-grade reliability standards defined by AEC-Q101.
BAV21W-E3-08
The maximum repetitive peak reverse voltage (VRRM) is 250 V.
Yes, the HE3 suffix indicates that the component is AEC-Q101 qualified.