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The BAV21WS-HE3-08 is a high-voltage small signal switching diode manufactured by Vishay General Semiconductor - Diodes Division. It utilizes planar silicon technology and is housed in an SOD-323 surface-mount package. Key electrical specifications include a maximum DC reverse voltage of 200 V, an average forward rectified current of 200 mA, and a peak forward surge current of 625 mA. The device features a typical reverse recovery time of 50 ns and a low junction capacitance of 1.5 pF at 0 V bias. It operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific suffix HE3-08 against the manufacturer's official datasheet to confirm RoHS compliance and packaging details. Ensure the ordering part number matches the exact voltage and current ratings required for the target application. Cross-reference the component marking code on the physical device with Vishay documentation to prevent counterfeit substitution.
Select this component when a standard switching diode requires higher reverse voltage tolerance than common 1N4148 types. The SOD-323 footprint offers a smaller alternative to axial packages while maintaining similar electrical characteristics. Consider the 50 ns recovery time for frequencies where faster super-fast recovery diodes are not strictly necessary but standard diodes are too slow.
This component belongs to the BAV21WS series of general-purpose switching diodes from Vishay. The series is characterized by its use of planar silicon technology and hermetically sealed glass encapsulation variants. It serves as a high-voltage variant within the broader family of small-signal switching diodes used for signal clipping, clamping, and logic level shifting.