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The BAV21WSQ-7-F is a surface mount high voltage fast switching diode manufactured by Diodes Incorporated. It operates within a junction temperature range of -55°C to +150°C and utilizes an SOD323 package. The device supports a maximum average rectified output current (Io) of 200mA and a forward continuous current (Ifm) of 250mA. Its DC blocking voltage (Vr) is rated at 200V, with a peak repetitive reverse voltage (Vrrm) of 250V. Electrical characteristics include a maximum reverse breakdown voltage of 250V at 100µA, a maximum forward voltage of 1.25V at 200mA, and a total capacitance of 5pF at 0V and 1MHz. Reverse recovery time is specified at 50ns.
Verify the Q-suffix indicates AEC-Q101 qualification for automotive use. Confirm the part is manufactured in IATF 16949 certified facilities if PPAP capability is required. Ensure compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3). Check that halogen content is below 900ppm and antimony is below 1000ppm for green device status.
Select this component when high voltage isolation is needed in a small surface mount footprint. The Q-suffix denotes automotive grade qualification suitable for environments requiring strict change control. Verify thermal resistance requirements against the 625 °C/W junction-to-ambient rating. Consider the 50ns reverse recovery time for high-speed signal processing needs.
This component belongs to the BAV19WS-BAV21WS series of silicon epitaxial planar diodes. It shares mechanical data and packaging standards with other variants in the family but differs in reverse voltage ratings. The datasheet DS30119 Rev. 23 provides comprehensive electrical and mechanical specifications for the entire series.
BAV21WS-7-F
The reverse recovery time (tRR) is 50ns under test conditions of IF = IR = 30mA, IRR = 0.1 x IR, and RL = 100Ω.
Yes, the Q-suffix indicates the part is qualified to AEC-Q101 standards and is manufactured in IATF 16949 certified facilities.