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The Vishay BAV23C-HE3_A-18 is a small signal switching diode featuring dual common cathode silicon epitaxial planar diodes in an SOT-23 package. It has a maximum repetitive peak reverse voltage of 250 V and a continuous forward current of 400 mA. The device exhibits a typical reverse recovery time of 50 ns and a forward voltage of 1.25 V at 200 mA. Operating temperature ranges from -55 °C to +150 °C, with storage temperatures up to +150 °C.
Verify the specific ordering code suffix against official Vishay documentation to confirm packaging options and AEC-Q101 qualification status. Ensure that the procurement specifications align with the required tape and reel dimensions for automated assembly processes. Cross-reference the component marking codes to validate authenticity and traceability during the sourcing phase.
Select this component when a dual common cathode configuration is required within a compact SOT-23 footprint. Consider the 50 ns reverse recovery time for high-speed switching requirements. Verify thermal management needs based on the specified power dissipation limits and operating temperature range for the target application environment.
This component belongs to the Vishay BAV23C series of small signal switching diodes. The HE3_A suffix indicates compliance with RoHS standards and inclusion of AEC-Q101 automotive qualification. The device utilizes silicon epitaxial planar technology designed for general-purpose fast switching applications in consumer and industrial electronics.
BAV23C-E3-18
The maximum repetitive peak reverse voltage (VRRM) is 250 V.
Yes, the HE3_A variant is AEC-Q101 qualified for automotive use.
The typical reverse recovery time (trr) is 50 ns under specified test conditions.