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The Nexperia BAV23C-QR is a dual high-voltage switching diode configured as common cathode, housed in an SOT-23 (TO-236AB) surface-mount package. It features a repetitive peak reverse voltage of 200V and a maximum forward current of 225mA. The device exhibits a peak reverse recovery time of 50ns and supports a non-repetitive peak forward surge current of 9A. Operating within a temperature range of -65°C to +150°C, it dissipates up to 350mW with a maximum forward voltage of 1.25V.
Verify the specific suffix 'QR' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive use. Cross-reference datasheet parameters such as Vrrm and Ifsm with design constraints before finalizing procurement.
Select this component for circuits requiring fast switching speeds and high reverse voltage tolerance in a compact SMD footprint. The common cathode configuration simplifies circuit layout compared to discrete dual diodes. Consider thermal management capabilities given the 350mW power dissipation limit in enclosed environments.
This part belongs to the BAV23C series of small-signal switching diodes manufactured by Nexperia. It is designed for general-purpose high-voltage switching applications where speed and reliability are critical. The SOT-23 package allows for automated surface-mount assembly, supporting high-volume production needs.
BAV23C,215
The maximum repetitive peak reverse voltage (Vrrm) is 200V.
Yes, the BAV23C-QR is qualified according to AEC-Q101 standards.
The peak reverse recovery time (trr) is 50ns.