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The Infineon BAV70E6767 is a general-purpose high-speed switching diode array featuring a common cathode configuration with two diodes. It operates within a maximum reverse voltage of 80 V and supports an average forward current of 200 mA per diode. The device utilizes a surface-mount TO-236-3 (SOT-23-3) package. Key electrical characteristics include a maximum reverse recovery time of 4 ns, a peak reverse leakage current of 150 nA at 70 V, and a maximum forward voltage drop of 1.25 V at 150 mA. It is qualified to AEC-Q101 standards for automotive applications and functions reliably up to a junction temperature of 150°C.
Verify the specific ordering suffix E6767 against official Infineon documentation to confirm the exact tape-and-reel packaging quantity and moisture sensitivity level. Ensure the component meets RoHS compliance requirements as specified in the latest datasheet revision. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a dual-diode solution with common cathode topology is required for space-constrained designs. The SOT-23-3 package offers a small footprint suitable for dense PCB layouts. Consider the 80 V reverse voltage rating and 200 mA current capacity to ensure adequate headroom for the target application's electrical demands.
This part belongs to the BAV70 family of general-purpose switching diodes manufactured by Infineon Technologies. The family includes various configurations such as single, dual, and triple diodes in different packages. The BAV70E6767 specifically denotes the dual common cathode variant optimized for surface-mount assembly and automotive qualification.
Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may not match the AEC-Q101 automotive qualification or specific reverse recovery time parameters.