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The BAV70LT1 is a dual common cathode switching diode manufactured by onsemi in an SOT-23 package. It features a reverse voltage rating of 100 V and a forward current capacity of 200 mA per diode. The device supports repetitive peak forward currents up to 1.5 A and non-repetitive surge currents ranging from 0.5 A to 31 A depending on pulse duration. Electrical characteristics include a maximum reverse recovery time of 6 ns, a forward voltage of 1.25 V at 150 mA, and a leakage current of 60 µA at 100 V. Total device dissipation reaches 300 mW on an alumina substrate, with an operating temperature range spanning -55°C to +150°C.
Verify the specific ordering suffix when sourcing this component, as variations such as LT1G or LT3G indicate different packaging quantities like tape and reel configurations. Confirm that the procurement matches the required automotive qualification status if the application demands AEC-Q101 compliance. Ensure the final part number aligns with the desired shipping unit quantity specified in the manufacturer's ordering information section.
Select this component for designs requiring a dual common cathode arrangement in a small footprint. The 100 V reverse voltage rating provides sufficient headroom for many low-voltage digital systems. Consider the thermal resistance values when determining heat dissipation requirements, particularly if operating near the upper temperature limits or on standard FR-5 boards rather than high-performance substrates.
This device belongs to the BAV70L series of dual switching diodes produced by onsemi. It shares functional similarities with other members of the family but is distinguished by its specific packaging and potential automotive qualification prefix. The SOT-23 form factor allows for automated surface-mount assembly, making it suitable for dense printed circuit board layouts where space efficiency is critical.
BAV70LT3G
Pin 1 is Anode, Pin 2 is Anode, and Pin 3 is Cathode.
Yes, devices with the S prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
The maximum junction and storage temperature is +150°C.