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The BAV70SH6327XTSA1 is a small signal switching diode manufactured by Infineon Technologies. It features a dual series configuration housed in a surface-mount SOT-363 package. The device supports a maximum DC reverse voltage of 80 V and an average rectified current of 200 mA per diode. Key electrical characteristics include a forward voltage of 1.25 V at 150 mA, a reverse leakage current of 150 nA at 70 V, and a reverse recovery time of 4 ns. It operates within a junction temperature range up to 150°C.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Confirm availability as the component may be subject to end-of-life notices or discontinuation. Ensure the ordering part number matches the required tape and reel specifications for production integration.
Select this component for designs requiring a dual series diode arrangement in a minimal footprint. Consider its 80V rating and 200mA current capacity for low-power signal processing tasks. Evaluate the 4ns reverse recovery time against high-speed switching requirements to ensure adequate performance margins.
This part belongs to Infineon's discrete diode portfolio, specifically the BAV70S series. It utilizes silicon technology and is designed for general-purpose switching applications. The SOT-363 package allows for space-constrained PCB layouts while maintaining reliable thermal performance under standard operating conditions.
Publicly confirmed substitute part numbers are not available in the provided source material.