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The BAV99-13-F is a dual surface-mount switching diode manufactured by Diodes Incorporated. It features a peak repetitive reverse voltage of 75 V and a non-repetitive peak reverse voltage of 100 V. The device supports a forward continuous current of 300 mA with a maximum power dissipation of 350 mW. Electrical characteristics include a reverse-recovery time of 4.0 ns, total capacitance of 2.0 pF, and a thermal resistance junction-to-ambient air of 357 °C/W. It operates within a temperature range of -55 to +150 °C.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantities and carrier types. Ensure compliance with environmental standards such as RoHS and halogen-free requirements when sourcing components for regulated industries. Confirm date code markings align with green molding compound specifications if required by design constraints.
Select this component for designs requiring compact dual-diode solutions in small surface-mount packages. Evaluate thermal resistance and power dissipation limits relative to ambient operating temperatures. Consider the fast switching speed and low capacitance for high-frequency signal processing or precise timing applications where rapid recovery times are critical.
This part belongs to the BAV99 series of high-speed switching diodes produced by Diodes Incorporated. The series utilizes silicon planar technology encapsulated in SOT23 plastic packages. These devices are widely recognized as industry-standard components for compact electronic designs requiring reliable dual-diode functionality in minimal footprint configurations.
BAV99-7-F
The maximum non-repetitive peak reverse voltage (VRM) is rated at 100 V.
No, the standard BAV99-13-F does not carry AEC-Q101 qualification. The BAV99Q variant is specifically qualified for automotive applications requiring change control.
The reverse-recovery time (trr) is typically 4.0 ns under specified test conditions.