BAV99S

Diode Arrays Overview

The BAV99S is a high-speed switching diode manufactured by Taiwan Semiconductor Corporation, encapsulated in the SOT-363 (SC-88) surface-mount device plastic package. This component integrates two silicon PN junction diodes configured as a common cathode dual array within a compact footprint. Key electrical specifications include a maximum repetitive peak reverse voltage of 100 V and a continuous forward current rating of 200 mA. The device exhibits a low reverse recovery time of 4 ns and a maximum diode capacitance of 1.5 pF, ensuring rapid switching performance. It operates within a temperature range from -65°C to +150°C with a power dissipation capacity of 250 mW.

Diode Arrays Feature Summary

• High-speed switching capability with a reverse recovery time of 4 ns
• Low parasitic capacitance for minimal signal distortion
• Compact SOT-363 surface-mount packaging for space-constrained designs
• Dual common-cathode configuration integrating two diodes in one package

Diode Arrays Applications

• High-speed signal switching circuits
• Reverse polarity protection for sensitive electronics
• General-purpose switching applications in consumer electronics

Diode Arrays Procurement Notes

Verify the manufacturer designation on the datasheet or official documentation to confirm Taiwan Semiconductor Corporation as the producer, as this part number is widely used across multiple vendors. Ensure the package type matches the required SOT-363 form factor. Cross-reference electrical parameters such as reverse recovery time and forward current against specific application requirements to guarantee compatibility.

Diode Arrays Selection Notes

Select this component when a small footprint and fast switching speed are critical. The dual common-cathode arrangement simplifies circuit design by reducing component count. Consider the 100 V reverse voltage rating and 200 mA forward current limits to ensure adequate headroom for the intended load conditions and operating environment.

Diode Arrays Part Context

The BAV99 series represents a family of high-speed switching diodes designed for general-purpose applications. These devices are characterized by their low capacitance and fast recovery times, making them suitable for modern electronic systems requiring efficient signal handling. The SOT-363 package variant offers a significant reduction in board space compared to traditional through-hole alternatives.

Diode Arrays FAQ

What is the internal configuration of the BAV99S?

The BAV99S contains two silicon PN junction diodes connected in a common cathode configuration.

What is the maximum reverse recovery time for this diode?

The maximum reverse recovery time is specified as 4 ns.

What is the maximum operating junction temperature?

The maximum operating temperature is +150°C.