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The BAV99UE6359HTMA1 is a dual silicon switching diode from Infineon Technologies, housed in an SC-74-6 surface-mount package. It features a peak reverse voltage of 85 V and a maximum forward current of 200 mA. The device exhibits a fast recovery time of 4 ns and a typical forward voltage of 1.25 V at rated current. Power dissipation is limited to 250 mW, with an operating temperature range spanning from -65 °C to +150 °C. This component is AEC-Q100 qualified for automotive reliability standards.
Verify the specific ordering suffix against official Infineon documentation to confirm pinout compatibility and packaging format. Confirm that the AEC-Q100 qualification status aligns with target application requirements. Cross-reference the SC-74-6 footprint dimensions with PCB layout specifications to ensure mechanical fit. Validate thermal management capabilities based on the 250 mW power dissipation limit in the intended enclosure environment.
Select this component when dual isolated switching functions are required in space-constrained designs. The SC-74-6 package offers a compact solution compared to discrete dual-diode arrangements. Consider the 85 V reverse voltage rating for low-voltage signal processing tasks. The high junction temperature capability supports operation in demanding thermal environments without derating.
This part belongs to Infineon's BAV99 series of small-signal switching diodes. The series is designed for general-purpose high-speed switching applications. The UE6359 suffix indicates specific tape-and-reel packaging configurations used for automated assembly processes. The HTMA1 identifier denotes the standard manufacturing traceability code for this product line.
Publicly confirmed substitute part numbers for BAV99UE6359HTMA1 were not identified in available documentation. Verify electrical equivalence with other BAV99 variants before substitution.