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The BAV99WB6327XT is a dual series-connected small-signal switching diode array manufactured by Infineon Technologies. It utilizes standard silicon technology and is housed in an SC-70 (SOT-323) surface-mount package. The device features a maximum DC reverse voltage of 80 V and an average rectified forward current of 200 mA per diode. Key electrical characteristics include a typical reverse recovery time of 4 ns, a forward voltage of 1.25 V at 150 mA, and a maximum reverse leakage current of 150 nA at 70 V. It operates within a junction temperature range up to 150°C.
Verify the specific suffix H6327XT against official Infineon documentation to confirm tape-and-reel packaging specifications and quantity. Ensure compatibility with SC-70 footprint requirements during procurement planning. Cross-reference RoHS compliance status with current regulatory standards before finalizing orders.
Select this component when space-constrained designs require dual diodes with fast switching capabilities. The SC-70 package offers minimal board area usage compared to larger alternatives. Consider the 80V reverse voltage rating and 200mA current limit to ensure adequate margin for the target application's electrical stress conditions.
This part belongs to the BAV99 family of small-signal switching diodes from Infineon Technologies. It serves as a surface-mount alternative to through-hole variants, providing similar electrical characteristics in a significantly smaller form factor. The series connection configuration simplifies circuit topology by reducing the number of required components.
BAV99SH6327XTSA1