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The BAW101-Q is a high-speed switching diode array featuring two electrically insulated dice in an SOT143B package. It supports a continuous reverse voltage of 300 V and a repetitive peak reverse voltage of up to 600 V in series connection. The device exhibits a maximum reverse recovery time of 50 ns and a forward voltage of 1.1 V at 100 mA. It operates within a junction temperature range of -65 °C to 150 °C and carries AEC-Q101 qualification for automotive reliability.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm tape-and-reel packaging quantities and marking codes. Confirm that the component status remains active production rather than obsolete or preliminary. Ensure design-in compliance with the absolute maximum ratings provided in the official datasheet to prevent device stress damage during operation.
Select this component when designing circuits requiring high-voltage isolation between two independent switching paths. The SOT143B package offers a small footprint suitable for space-constrained layouts. Verify thermal dissipation requirements against the specified junction-to-ambient resistance values, particularly if operating near the maximum ambient temperature limits defined in the limiting values table.
This part belongs to Nexperia's BAW series of high-voltage double diodes. It utilizes planar technology to fabricate two separate dice within a single surface-mounted device. The series focuses on providing robust switching performance for automotive and communication sectors where high reverse voltage tolerance and fast recovery times are critical design parameters.
BAW101S-Q
When connected in series, the BAW101-Q supports a maximum repetitive peak reverse voltage of 600 V.
Yes, the datasheet specifies that the two diodes are electrically insulated from each other.
The diode capacitance is typically 2 pF when measured at VR = 0 V and f = 1 MHz.