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The BAW101E6327HTSA1 is a silicon switching diode from Infineon Technologies, housed in an SOT-143 package with a parallel configuration. It features a maximum reverse voltage of 300 V and a forward current rating of 250 mA. The device supports a peak forward current of 500 mA and a surge current of 4.5 A. Electrical characteristics include a typical reverse recovery time of 1 µs and a junction capacitance of 6 pF at 0 V bias. It operates within a temperature range of -65 °C to +150 °C and is qualified according to the AEC-Q101 standard.
Verify the specific suffix code against official documentation to confirm exact marking and packaging details. Confirm RoHS compliance status and AEC-Q101 qualification requirements for your target application environment. Ensure thermal management aligns with the specified junction temperature limits during operation.
Select this component when high reverse voltage blocking capability combined with medium-speed switching performance is required. The parallel internal configuration allows for efficient handling of moderate forward currents. Consider the SOT-143 footprint constraints and thermal resistance values when designing the PCB layout for optimal heat dissipation.
This part belongs to the BAW101 series of electrically insulated high-voltage medium-speed diodes manufactured by Infineon Technologies. These components are designed for robust performance in demanding environments, featuring lead-free packaging and automotive-grade qualification standards suitable for reliable long-term operation.
BAW101/G31, BAW101/G44, BAW101/G32, BAW101/G33, BAW101/G34