Diode Arrays BAW56HYT116 product image

BAW56HYT116

$0.23
  • Description:DIODE ARRAY GP 80V 215MA SOT23
  • Series:-

SKU:81652fb3e5d6 Category: Brand:

  
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BAW56HYT116 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE ARRAY GP 80V 215MA SOT23. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAW56HYT116

  • Description:DIODE ARRAY GP 80V 215MA SOT23
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:100 nA @ 80 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BAW56HYT116

BAW56HYT116

Diode Arrays Overview

The BAW56HYT116 is a high-speed switching diode manufactured by ROHM Semiconductor, housed in an SSD3 (SOT-23) surface-mount package. It features a dual common anode configuration with two silicon elements. Key electrical parameters include a maximum reverse voltage of 80 V and a peak repetitive reverse voltage of 100 V. The device supports an average rectified forward current of 215 mA and a non-repetitive peak forward surge current of 4 A. Typical performance metrics specify a reverse recovery time of 4 ns, a maximum forward voltage of 1.25 V at 150 mA, and a low reverse leakage current of 0.1 µA at 80 V. The component operates within a junction temperature range up to 150 °C.

Diode Arrays Feature Summary

  • High-speed switching capability with typical reverse recovery time of 4 ns for efficient signal processing.
  • Low reverse leakage current design suitable for applications requiring minimal power loss in off-states.
  • Compact SSD3 surface-mount package optimized for automated assembly and space-constrained PCB layouts.

Diode Arrays Applications

  • Ultra-high speed switching circuits
  • General purpose signal processing
  • Clamping and protection in digital logic interfaces

Diode Arrays Procurement Notes

Verify the specific ordering suffix T116 to confirm the tape-and-reel packaging quantity of 3000 units. Ensure the selected variant matches the required automotive or industrial grade if applicable, as standard versions may lack specific qualification certifications. Cross-reference the datasheet revision date to confirm compliance with current RoHS and REACH directives before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when a dual common anode configuration is required for high-frequency signal routing. The 80 V reverse voltage rating provides sufficient margin for most low-voltage digital systems. Consider the 4 ns recovery time against system clock speeds to ensure minimal switching losses. Compare the SSD3 footprint against available board space and thermal dissipation requirements relative to the 250 mW power dissipation limit.

Diode Arrays Part Context

This part belongs to ROHM's BAW56 series of small-signal switching diodes, designed as alternatives to industry-standard equivalents like the BAV99. The HY suffix typically denotes specific manufacturing lot or quality attributes within the ROHM portfolio. These devices are widely used in consumer electronics and industrial control systems where reliable, fast-switching performance in compact packages is essential.

Diode Arrays Replacement Considerations

The DAP222MFH is listed as a similar specification replacement with identical pinout and package dimensions. Verify that the DAP222MFH meets the same 80 V reverse voltage and 4 ns recovery time requirements before substitution.

BAW56HYT116BAW56HYT116
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