BAW56S/DG/B3X

Diode Arrays Overview

The BAW56S/DG/B3X is a dual common-anode switching diode array manufactured by Nexperia USA Inc. It utilizes silicon junction technology and is housed in a compact SOT-363 (SC-88) surface-mount package with six leads. The device features a maximum repetitive peak reverse voltage of 90 V and supports a continuous forward current of 250 mA per diode. Key electrical characteristics include a low peak reverse recovery time of 4 ns, a maximum DC power dissipation of 250 mW, and a peak non-repetitive forward surge current rating of 4 A. The component operates within a temperature range from -65°C to +150°C.

Diode Arrays Feature Summary

• Dual common-anode configuration for efficient space-saving circuit design
• Ultra-fast switching capability with minimal reverse recovery delay
• Robust thermal performance suitable for high-density surface-mount applications

Diode Arrays Applications

• High-speed signal processing circuits
• Voltage clamping and protection stages
• Line termination networks
• Reverse polarity protection mechanisms

Diode Arrays Procurement Notes

Verify the specific suffix DG/B3X against official Nexperia documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure compatibility with standard SOT-363 footprint designs during procurement planning. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through current datasheets before finalizing supply chain agreements.

Diode Arrays Selection Notes

Select this component when dual common-anode switching functionality is required in ultra-small form factors. The SOT-363 package offers significant board space reduction compared to discrete solutions. Consider the 4 ns reverse recovery time for high-frequency applications where switching losses must be minimized. Verify that the 90 V reverse voltage rating exceeds the maximum expected circuit voltages under all operating conditions.

Diode Arrays Part Context

This part belongs to the BAW56 series of silicon planar switching diodes designed for general-purpose high-speed applications. Nexperia manufactures these devices using advanced process technologies to ensure consistent performance across automotive and industrial sectors. The SOT-363 package is widely adopted in portable electronics due to its small outline dimensions and reliable surface-mount soldering characteristics.

Diode Arrays Replacement Considerations

BAW56,115

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the BAW56S/DG/B3X?

The maximum repetitive peak reverse voltage (Vrrm) is 90 V.

Does the BAW56S/DG/B3X support AEC-Q101 qualification?

Yes, the BAW56S series is qualified according to AEC-Q101 standards for automotive applications.

What is the typical reverse recovery time for this diode array?

The peak reverse recovery time (trr) is specified as 4 ns.