Diode Arrays BAW56SRA-QZ product image

BAW56SRA-QZ

$0.05
  • Description:DIODE ARR GP 90V 375MA DFN1412-6
  • Series:-

SKU:5954d527126d Category: Brand:

  
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BAW56SRA-QZ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE ARR GP 90V 375MA DFN1412-6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAW56SRA-QZ

  • Description:DIODE ARR GP 90V 375MA DFN1412-6
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Diode Configuration:2 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):90 V
  • Current - Average Rectified (Io) (per Diode):375mA
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 80 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1412-6
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BAW56SRA-QZ

BAW56SRA-QZ

Diode Arrays Overview

The BAW56SRA-QZ is a dual common-anode switching diode array manufactured by Nexperia USA Inc. It features a peak reverse repetitive voltage (Vrrm) of 90 V and a maximum forward current (If) of 215 mA per diode. The device operates within a junction temperature range of -65°C to +150°C and has a maximum power dissipation (Pd) of 250 mW. Key electrical parameters include a peak reverse recovery time (trr) of 4 ns, a maximum forward voltage (Vf) of 1.25 V, and a maximum reverse leakage current of 500 nA at 80 V. The component is housed in a compact SOT-363 (SC-88) surface-mount package with six pins.

Diode Arrays Feature Summary

  • Dual common-anode configuration for efficient circuit design
  • Fast switching capability with low reverse recovery time
  • Automotive-grade reliability certified under AEC-Q101 standards

Diode Arrays Applications

  • Automotive electronics systems requiring robust signal switching
  • General-purpose rectification in consumer electronic devices
  • Protection circuits in industrial control applications

Diode Arrays Procurement Notes

Verify the specific suffix 'QZ' against official Nexperia documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment based on the SC-88/SOT-363 footprint dimensions. Confirm that the automotive qualification aligns with your system's environmental requirements before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual-diode solution is required in a minimal footprint. The AEC-Q101 certification makes it suitable for automotive environments where high thermal stability and long-term reliability are critical. Compare the 90 V rating and 215 mA current capacity against circuit demands to ensure adequate headroom for transient conditions.

Diode Arrays Part Context

This part belongs to the BAW56 series of small-signal switching diodes from Nexperia. The series is widely used in various electronic applications due to its balance of performance and cost-effectiveness. The 'Q' designation typically indicates automotive-grade quality, while the 'SRA' suffix specifies the dual common-anode configuration in the SOT-363 package.

Diode Arrays Replacement Considerations

BAW56S,115

Diode Arrays FAQ

What is the maximum operating junction temperature for the BAW56SRA-QZ?

The maximum operating junction temperature is +150°C.

Is the BAW56SRA-QZ qualified for automotive applications?

Yes, the component is AEC-Q101 qualified, making it suitable for automotive electronics.

What is the reverse recovery time of this diode array?

The peak reverse recovery time is 4 ns.

BAW56SRA-QZBAW56SRA-QZ
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