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BAW56SRA-QZ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE ARR GP 90V 375MA DFN1412-6. Review the specifications below when checking this part for your BOM.
The BAW56SRA-QZ is a dual common-anode switching diode array manufactured by Nexperia USA Inc. It features a peak reverse repetitive voltage (Vrrm) of 90 V and a maximum forward current (If) of 215 mA per diode. The device operates within a junction temperature range of -65°C to +150°C and has a maximum power dissipation (Pd) of 250 mW. Key electrical parameters include a peak reverse recovery time (trr) of 4 ns, a maximum forward voltage (Vf) of 1.25 V, and a maximum reverse leakage current of 500 nA at 80 V. The component is housed in a compact SOT-363 (SC-88) surface-mount package with six pins.
Verify the specific suffix 'QZ' against official Nexperia documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment based on the SC-88/SOT-363 footprint dimensions. Confirm that the automotive qualification aligns with your system's environmental requirements before finalizing procurement.
Select this component when a dual-diode solution is required in a minimal footprint. The AEC-Q101 certification makes it suitable for automotive environments where high thermal stability and long-term reliability are critical. Compare the 90 V rating and 215 mA current capacity against circuit demands to ensure adequate headroom for transient conditions.
This part belongs to the BAW56 series of small-signal switching diodes from Nexperia. The series is widely used in various electronic applications due to its balance of performance and cost-effectiveness. The 'Q' designation typically indicates automotive-grade quality, while the 'SRA' suffix specifies the dual common-anode configuration in the SOT-363 package.
BAW56S,115
The maximum operating junction temperature is +150°C.
Yes, the component is AEC-Q101 qualified, making it suitable for automotive electronics.
The peak reverse recovery time is 4 ns.
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