BB 659 E7908

Overview

The BB 659 E7908 is a silicon variable capacitance diode manufactured by Infineon Technologies. It features a peak reverse voltage of 30 V and a maximum forward current of 20 mA. The device utilizes an SCD-80 package for surface-mount assembly. This component is designed for applications requiring tunable capacitance in radio frequency circuits, operating within a junction temperature range of -55°C to 150°C.

Feature Summary

• Silicon-based construction for stable variable capacitance performance
• Single diode configuration optimized for RF tuning applications
• Surface-mount SCD-80 package design for compact integration

Applications

• RF circuit tuning
• Voltage-controlled oscillator (VCO) frequency adjustment
• Phase-locked loop (PLL) filter networks

Procurement Notes

Verify the obsolete status of this specific part number before procurement planning. Confirm availability through authorized distributors or secondary market suppliers, as original manufacturing may have ceased. Ensure that any sourced units meet the specified electrical parameters for your application requirements.

Selection Notes

Consider the 30 V peak reverse voltage limit when designing high-voltage RF environments. Evaluate the SCD-80 package constraints for PCB layout and thermal management. Assess if modern equivalent varactor diodes with updated packaging or higher reliability ratings better suit long-term production needs.

Part Context

This component belongs to Infineon's portfolio of discrete semiconductor devices, specifically within the category of variable capacitance diodes. These components are essential for adjusting resonant frequencies in analog and mixed-signal RF systems, providing precise control over circuit impedance and bandwidth characteristics.

Replacement Considerations

Public confirmed substitute part numbers: BB 659C-02V E7908.