BB 659C-02V E7908

Overview

The BB659C-02V is a silicon variable capacitance diode designed for VHF TV and VTR tuner applications. It operates in the SC79 package with a single configuration and features low series inductance of 0.6 nH. Key electrical parameters include a maximum reverse voltage of 30 V, peak reverse voltage of 35 V, and forward current of 20 mA. At 1 MHz, the diode capacitance ranges from 2.4 pF to 2.75 pF at 28 V reverse bias, and 36.5 pF to 42 pF at 1 V. The typical capacitance ratio (CT1/CT28) is 15.3, with a series resistance of 0.6 Ω at 470 MHz.

Feature Summary

• High capacitance ratio for extended frequency band tuning
• Low series inductance and resistance
• Excellent uniformity and matching due to in-line assembly

Applications

• Tuning of extended frequency bands in VHF tuners
• Tuning circuits in VTR tuners

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and Pb-free status as specified in the datasheet. Check for AEC-Q100 qualification if automotive reliability is required. Ensure storage conditions remain within -55°C to 150°C to maintain performance integrity.

Selection Notes

Select this component when high capacitance ratios are needed for VHF applications. Consider the SC79 package dimensions and 0.6 nH series inductance for circuit layout. Evaluate thermal management requirements given the operating temperature range up to 150°C. Compare against BB639C for SOD323 packaging alternatives.

Part Context

Part of the BB639C/BB659C series of silicon varactor diodes. Manufactured by Infineon Technologies AG. Designed specifically for tuner applications requiring precise capacitance control. Available in multiple packages including SCD80 and SC79.

Replacement Considerations

BB639C offers similar electrical characteristics in an SOD323 package. BB659C provides identical performance in the SCD80 package. Verify pinout compatibility and package dimensions before substitution.