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The BB814E6327GR2 is a silicon hyperabrupt junction varactor diode manufactured by Infineon Technologies. It features a dual-diode configuration with a common cathode, housed in an SOT-23-3 surface-mount package. The device is designed for variable capacitance applications, offering a maximum reverse voltage of 18 V. Key electrical characteristics include a typical capacitance of 42.5 pF at zero bias and a minimum tuning ratio of 3.2 under specified test conditions. It supports a forward current of 50 mA and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix GR2 against official Infineon documentation to confirm exact tape-and-reel specifications and packaging details. Ensure compatibility with existing PCB footprints for the SOT-23-3 package. Confirm that the hyperabrupt junction characteristics meet the precise linearity requirements of the target RF application before finalizing procurement.
Select this component when a high tuning ratio and linear frequency response are required in space-constrained designs. The common-cathode arrangement simplifies circuit topology compared to discrete single diodes. Consider the 18 V reverse voltage limit and thermal management capabilities when designing for high-power or high-temperature environments.
This part belongs to Infineon's portfolio of variable capacitance diodes, specifically utilizing hyperabrupt junction technology. It serves as a critical passive component in RF front-end modules, enabling precise frequency control in wireless communication systems where stable performance across varying temperatures is essential.
Consult official Infineon cross-reference guides for verified substitutes. Generic varactor replacements may not match the specific hyperabrupt capacitance-voltage curve or the dual common-cathode configuration, potentially altering circuit performance.