BB814E6327GR2

BB814E6327GR2

  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-

SKU:cad2f1c019e4 Category: Brand:

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Product Detailed Parameters

  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Capacitance @ Vr, F:22.7pF @ 8V, 1MHz
  • Capacitance Ratio:2.25
  • Capacitance Ratio Condition:C2/C8
  • Voltage - Peak Reverse (Max):18 V
  • Diode Type:1 Pair Common Cathode
  • Q @ Vr, F:200 @ 2V, 100MHz
  • Operating Temperature:-55°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23-3-1

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BB814E6327GR2

Overview

The BB814E6327GR2 is a silicon hyperabrupt junction varactor diode manufactured by Infineon Technologies. It features a dual-diode configuration with a common cathode, housed in an SOT-23-3 surface-mount package. The device is designed for variable capacitance applications, offering a maximum reverse voltage of 18 V. Key electrical characteristics include a typical capacitance of 42.5 pF at zero bias and a minimum tuning ratio of 3.2 under specified test conditions. It supports a forward current of 50 mA and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Hyperabrupt junction design for enhanced tuning linearity
  • Dual common-cathode configuration in compact SOT-23-3 package
  • High operating temperature capability up to 150°C

Applications

  • RF tuning circuits
  • Voltage-controlled oscillators (VCOs)
  • Frequency synthesizers

Procurement Notes

Verify the specific suffix GR2 against official Infineon documentation to confirm exact tape-and-reel specifications and packaging details. Ensure compatibility with existing PCB footprints for the SOT-23-3 package. Confirm that the hyperabrupt junction characteristics meet the precise linearity requirements of the target RF application before finalizing procurement.

Selection Notes

Select this component when a high tuning ratio and linear frequency response are required in space-constrained designs. The common-cathode arrangement simplifies circuit topology compared to discrete single diodes. Consider the 18 V reverse voltage limit and thermal management capabilities when designing for high-power or high-temperature environments.

Part Context

This part belongs to Infineon's portfolio of variable capacitance diodes, specifically utilizing hyperabrupt junction technology. It serves as a critical passive component in RF front-end modules, enabling precise frequency control in wireless communication systems where stable performance across varying temperatures is essential.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Generic varactor replacements may not match the specific hyperabrupt capacitance-voltage curve or the dual common-cathode configuration, potentially altering circuit performance.

BB814E6327GR2BB814E6327GR2

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