BB814E6327GR2HTSA1

Overview

The BB814E6327GR2HTSA1 is a varactor diode manufactured by Infineon Technologies, designed for voltage-controlled tuning applications. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The component supports a maximum reverse current of 50 mA and operates within a standard temperature range. As part of the BB814 series, it provides variable capacitance characteristics suitable for RF circuit integration.

Feature Summary

• Voltage-variable capacitance functionality for RF tuning
• Silicon-based construction for reliable performance
• Compact SOT-23 surface-mount packaging

Applications

• RF oscillator circuits
• Frequency synthesizers
• Voltage-controlled oscillators (VCOs)

Procurement Notes

Verify the specific suffix GR2 against official Infineon documentation to confirm tape-and-reel specifications and handling requirements. Ensure compatibility with existing PCB footprint designs for the SOT-23 package. Cross-reference the AEC qualification status if automotive reliability standards are required for the target application environment.

Selection Notes

Select this component when a small-signal varactor with low forward current leakage is needed for high-frequency tuning. Compare junction capacitance ranges and Q-factor metrics against alternative models in the BB8xx series. Confirm that the operating voltage range aligns with the system's control signal capabilities before finalizing the design.

Part Context

This device belongs to Infineon's discrete semiconductor portfolio, specifically within the varactor diode category. It complements other RF components like the BB844, offering similar form factors but distinct electrical characteristics. The product line targets consumer electronics and communication devices requiring precise frequency control.