BB814E6359HTMA1

Overview

The BB814E6359HTMA1 is a silicon variable capacitance diode manufactured by Infineon Technologies, designed for high-performance RF tuning applications. It features a common cathode configuration with two integrated varactor diodes in a compact PG-SOT23-3-1 surface-mount package. The device operates within a reverse voltage range up to 18 V and supports an extended temperature range from -55°C to +125°C. Key electrical characteristics include a typical capacitance ratio of 2.7 at 0V/5V bias conditions and a low series resistance of 1.5 Ohms at 1 GHz. These specifications ensure efficient signal tuning in FM tuner circuits and other radio frequency systems requiring precise impedance matching.

Feature Summary

• Dual varactor structure with common cathode configuration for simplified circuit design
• High capacitance tuning ratio ensuring effective frequency modulation control
• Low series resistance optimized for minimal signal loss at RF frequencies
• RoHS compliant construction suitable for modern environmental standards

Applications

• FM radio tuner circuits
• RF impedance matching networks
• Voltage-controlled oscillator (VCO) tuning
• Phase-locked loop (PLL) frequency synthesis

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm the specific suffix HTMA1 matches project requirements. Check for end-of-life notifications or alternative recommendations if long-term supply stability is critical. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during assembly.

Selection Notes

Select this component when dual varactor functionality is required in a minimal footprint. The common cathode arrangement reduces board space compared to discrete solutions. Evaluate the 18 V reverse voltage limit against peak RF signals. Consider the -55°C to 125°C operating range for automotive or industrial environments where thermal stability is essential for consistent tuning performance.

Part Context

This part belongs to Infineon's portfolio of silicon varactor diodes engineered for RF communication systems. It complements other tuning components by providing reliable capacitance variation under varying bias voltages. The SOT-23-3 package aligns with standard surface-mount manufacturing processes, facilitating integration into consumer electronics and telecommunications hardware requiring compact RF front-end designs.

Replacement Considerations

Direct substitutes may include variants like BB814 without the E6359HTMA1 suffix if pin compatibility is identical. Verify that alternative parts maintain the same 18 V rating and capacitance ratio. Cross-reference mechanical dimensions to ensure fit within existing PCB footprints. Consult Infineon documentation for any recommended obsolescence alternatives.