BB814E7801GR1HTSA1

Overview

The BB814E7801GR1HTSA1 is a high-voltage N-channel power MOSFET from Infineon's OptiMOS™ portfolio, designed for robust automotive and industrial switching applications. It features a drain-source voltage rating of 800 V and a continuous drain current capability optimized for high-power density designs. The device utilizes advanced trench technology to achieve low on-resistance, minimizing conduction losses and enhancing overall system efficiency. Packaged in a thermally enhanced PG-DSO-8 format, it ensures reliable thermal performance under demanding operating conditions while maintaining compliance with stringent automotive qualification standards.

Feature Summary

• High-voltage 800 V rating suitable for demanding power conversion topologies
• Low specific on-resistance for improved energy efficiency and reduced heat generation
• Automotive-grade reliability with AEC-Q101 qualification
• Compact PG-DSO-8 package enabling high-density PCB layouts

Applications

• On-board charger (OBC) systems for electric vehicles
• DC-DC converters in automotive power distribution networks
• Industrial motor control and inverter stages
• High-efficiency AC-DC power supplies

Procurement Notes

Verify the complete ordering code including suffixes such as HTSA1 against official Infineon documentation to ensure correct tape-and-reel packaging and specific temperature grade. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Cross-reference the component marking code with the datasheet to prevent counterfeit substitution during incoming inspection.

Selection Notes

Select this component when designing circuits requiring 800 V blocking capability with moderate current levels. Evaluate the thermal resistance characteristics relative to the expected ambient temperature and cooling strategy. Ensure the gate charge parameters align with the driving circuit's speed requirements to balance switching losses against electromagnetic interference constraints in the target application.

Part Context

This part belongs to Infineon's OptiMOS™ 7 family, representing the latest generation of trench power MOSFETs. The series focuses on reducing figure-of-merit values through simultaneous optimization of on-resistance and gate charge. These devices are engineered to replace older silicon technologies in high-voltage applications, offering superior ruggedness and switching performance within standardized surface-mount packages.

Replacement Considerations

Direct pin-compatible replacements may include other 800 V OptiMOS™ variants in PG-DSO-8 packages with similar R_DS(on) specifications. Verify that any substitute maintains equivalent avalanche energy ratings and thermal stability. Consult Infineon's cross-reference tools for validated alternatives that meet identical automotive quality and functional safety requirements.