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The BBY5102VH6327XTSA1 is a silicon tuning diode from the BBY51 series, designed for low tuning voltage operation in mobile communications equipment. It features a hyperabrupt junction and high Q factor. The device operates within a reverse voltage range of up to 7 V and supports forward currents up to 20 mA. Electrical characteristics include a capacitance of 3.7 pF at 4 V and 1 MHz, with a maximum capacitance ratio of 2.2 between 1 V and 4 V. The component utilizes an SC-79 (SOD-523) surface-mount package and functions reliably across a temperature range of -55 °C to 125 °C.
Verify the exact ordering suffix against official Infineon documentation to confirm package type and marking details. Confirm current lifecycle status as distributors may list obsolete or end-of-life inventory. Ensure compatibility with RoHS compliance requirements for your specific manufacturing process before finalizing procurement orders.
Select this component when designing circuits requiring low operating voltages and high Q factors for frequency stability. Compare the specified capacitance values and ratios against circuit simulation requirements. Verify that the SC-79 package dimensions fit the available PCB real estate constraints for the target application design.
This part belongs to the BBY51 series of silicon tuning diodes manufactured by Infineon Technologies. The series includes variants such as BBY51-02L, BBY51-02W, and BBY51-03W, which differ primarily in their physical packaging configurations like SOT23, TSLP-2-1, and SCD80 while maintaining similar electrical performance profiles for RF tuning applications.
Consult the official datasheet for alternative part numbers within the BBY51 family that utilize different packages such as SOT23 or SCD80 if mechanical footprint changes are permissible. Verify pinout compatibility and electrical parameter equivalence before substituting with components from other manufacturers.