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The BBY5102WH6327XTSA1 is a silicon hyperabrupt tuning diode from the BBY51 series, designed for low tuning voltage operation in mobile communications equipment. It features a single common cathode configuration housed in an SCD80 (SOD-323) surface-mount package. Key electrical parameters include a maximum reverse voltage of 7 V and a forward current rating of 20 mA. At 1 MHz, the diode capacitance ranges from 5.75 pF at 1 V to 3.7 pF at 4 V, with a typical capacitance ratio of 1.75. The device operates within a temperature range of -55 °C to 125 °C.
Verify component authenticity by checking the marking code against the official datasheet layout. Confirm the package type matches the SCD80 designation and ensure the ordering suffix corresponds to the required reel quantity. Cross-reference the date code format to validate production timing and supply chain integrity before integration into manufacturing processes.
Select this component when designing circuits requiring high Q factors and low operating voltages for frequency tuning. Ensure the design accommodates the 7 V reverse voltage limit and 20 mA forward current constraints. Verify that the SCD80 package dimensions fit the PCB footprint requirements and that the thermal management supports the specified operating temperature range.
This part belongs to the BBY51 series of silicon tuning diodes manufactured by Infineon Technologies. The series includes variants such as BBY51-02L and BBY51-03W, which differ primarily in package types like TSLP-2-1 or SOT-23. The BBY5102WH6327XTSA1 specifically utilizes the SCD80 package and is engineered for robust performance in mobile communication devices.
Direct substitutes within the same family include BBY51-02L and BBY51-03W, provided the package form factor difference is acceptable. Verify pinout compatibility and electrical parameter alignment, particularly capacitance ratios and reverse voltage ratings, before implementing any cross-package replacement.