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The BBY5103WE6327HTSA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies, designed for low tuning voltage operation in mobile communications equipment. It features a single configuration within an SOD-323 package. Key electrical parameters include a maximum reverse voltage of 7 V and a forward current rating of 20 mA. At 1 MHz, the capacitance ranges from 5.4 pF at 1 V to 3.1 pF at 4 V, yielding a capacitance ratio of up to 2.2. The device operates between -55 °C and 125 °C, with a storage temperature range extending to 150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required package type and marking code. Ensure compliance with environmental regulations regarding lead-free materials. Check for any discontinuation notices or lifecycle status updates before finalizing procurement plans.
Select this component when designing circuits requiring high Q factors and hyperabrupt capacitance-voltage characteristics. The SOD-323 package suits compact surface-mount designs. Verify that the 7 V reverse voltage limit accommodates the circuit's peak reverse bias conditions. Consider the -55 °C to 125 °C operating range for environmental suitability.
This part belongs to the BBY51 series of silicon tuning diodes. Variants such as BBY51-02L and BBY51-02W offer different package configurations like TSLP-2-1 or SC80 while maintaining similar electrical profiles. The '03W' suffix specifically denotes the SOD-323 package variant with corresponding laser marking codes.
Direct substitutes include other BBY51 series variants like BBY51-02L or BBY51-02W if package compatibility allows. Cross-reference capacitance ratios and reverse voltage ratings with alternative hyperabrupt tuning diodes from other manufacturers to ensure functional equivalence in VCO designs.