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The BBY5202LE6327XTMA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies. It operates within a reverse voltage range of up to 7 V and supports forward currents of 20 mA. The device functions across an operating temperature range from -55 °C to +150 °C. Key electrical characteristics include a typical capacitance of 1.4 pF at 1 V reverse bias and 1 MHz frequency, with a maximum series resistance of 1.7 Ω at 1 GHz. The component utilizes the TSLP-2-1 leadless package configuration.
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm RoHS compliance details directly with the manufacturer or authorized distributors. Ensure that the procurement channel provides valid traceability for the component batch. Cross-reference the part number with current availability lists as product lifecycles may change.
Select this component when designing circuits requiring high Q factors and low tuning voltages. Verify that the required operating temperature range aligns with the specified -55 °C to +150 °C limits. Ensure the circuit design accommodates the maximum reverse voltage of 7 V and forward current of 20 mA. Consider the TSLP-2-1 package dimensions for board layout compatibility.
This component belongs to the BBY52 series of silicon tuning diodes produced by Infineon Technologies. The series includes variants such as the BBY52-02W, which differs primarily in package style. These devices are engineered for RF applications requiring precise capacitance control under varying reverse bias conditions.
Consult official Infineon documentation for verified substitute part numbers. Direct replacements must match the electrical specifications and package requirements. Generic equivalents should be evaluated against the original datasheet parameters before integration.