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The BBY5305WH6327XTSA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies. It features a common cathode configuration and is housed in an SOT-323 surface-mount package. The device is designed for low tuning voltage operation, specifically for Voltage Controlled Oscillators (VCOs) in mobile communications equipment. Key electrical parameters include a maximum reverse voltage of 6 V, a forward current rating of 20 mA, and a typical capacitance ratio of 2.2 at 1 MHz. The component operates within a temperature range of -55 °C to 125 °C.
Verify the specific suffix WH6327XTSA1 against official Infineon documentation to confirm the exact packaging format and reel specifications. Ensure that the SOT-323 package dimensions align with the target PCB footprint requirements before finalizing procurement orders.
Select this component when designing VCOs that require high Q factors and significant capacitance variation at low reverse bias voltages. The SOT-323 package is suitable for space-constrained mobile designs. Verify that the 6 V reverse voltage limit meets the circuit's peak operating conditions.
This part belongs to the BBY53 series of silicon hyperabrupt tuning diodes from Infineon Technologies. The series includes variants such as BBY53-02L, BBY53-02V, and BBY53-03W, which differ primarily in their package types and specific capacitance characteristics while sharing similar operational principles for RF tuning applications.
Consult official Infineon documentation for confirmed substitute part numbers. Cross-referencing requires matching the hyperabrupt profile, SOT-323 package, and 6 V reverse voltage rating.