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The BBY5705WH6327XTSA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies, designed for low tuning voltage operation in mobile communications equipment. It features excellent linearity and high Q factor with low series resistance. The component operates within a reverse voltage range of up to 10 V and supports an operating temperature range from -55 °C to 125 °C. It utilizes the SOT-323 package configuration with a common cathode setup. Key electrical characteristics include a capacitance ratio of 3.7 (VR = 1 V to VR = 4 V) and a typical DC reverse current of 10 nA at 8 V.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and marking details. Ensure compliance with AEC-Q101 qualification requirements if automotive application is intended. Confirm RoHS compliance status through manufacturer certificates prior to integration into production lines.
Select this component when low tuning voltage and high linearity are required for VCO designs. Compare capacitance ratios and series resistance values against circuit specifications. Verify that the SOT-323 package dimensions fit the target PCB layout constraints.
This part belongs to the BBY57 series of silicon tuning diodes from Infineon Technologies. The series includes variants such as BBY57-02L, BBY57-02V, and BBY57-02W, which differ primarily in package type and internal configuration. The BBY5705W variant specifically uses the SOT-323 package with a common cathode arrangement.
Direct substitutes within the same family include BBY57-02L, BBY57-02V, and BBY57-02W. Verify package compatibility and pinout alignment before substitution. Electrical parameters such as capacitance and reverse voltage must match the original design requirements.