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BC 817-16 B5003 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN 45V 0.5A PG-SOT23. Review the specifications below when checking this part for your BOM.
The BC817-16 B5003 is an NPN silicon general-purpose transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 45 V and a continuous collector current of 500 mA. The device features a DC current gain (hFE) range of 100 to 250, ensuring consistent amplification performance. Packaged in the SOT-23 surface-mount format, it supports a maximum power dissipation of 500 mW and a junction temperature up to +150°C. This component is designed for efficient switching and linear amplification tasks within compact electronic circuits.
Verify the specific manufacturer origin, as the BC817 series is widely produced by multiple semiconductor vendors including Nexperia and STMicroelectronics. Confirm that the 'B5003' suffix corresponds to the exact packaging or binning requirements for your assembly line. Ensure the component matches the required hFE gain band and thermal specifications before finalizing procurement.
Select this component when a standard NPN transistor with moderate current handling and low voltage ratings is required. The SOT-23 package facilitates automated surface-mount assembly. Verify that the 45V breakdown voltage and 500mA current limits align with the circuit's operational parameters to ensure reliable long-term performance.
This part belongs to the BC817 family of general-purpose NPN transistors. These devices are industry-standard components used extensively in consumer electronics and industrial control systems. The BC817-16 variant specifically denotes a defined current gain range, providing predictable behavior for design engineers without requiring extensive sorting or testing during production.
Compatible substitutes include BC817-16 from Nexperia or STMicroelectronics. Verify pinout compatibility and electrical parameter equivalence before substitution.
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