BC 817-25 E6433

Single Bipolar Transistors Overview

The BC817-25E6433 is an NPN silicon general-purpose bipolar junction transistor manufactured by Infineon Technologies. It operates in a surface-mount SOT-23-3 package with a maximum collector-emitter voltage of 45 V and continuous collector current of 500 mA. The device features a DC current gain (hFE) range of 160 to 400, ensuring consistent amplification performance. Key electrical limits include a collector-base voltage of 50 V, emitter-base voltage of 5 V, and power dissipation of 250 mW. The transition frequency is rated at 100 MHz, supporting standard audio and low-frequency switching applications.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for reliable general-purpose signal amplification
• High DC current gain range of 160 to 400 for stable operation
• Surface-mount SOT-23-3 packaging for compact circuit integration

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Switching circuits
• Audio amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as the BC817-25 designation is historically associated with STMicroelectronics while the E6433 suffix indicates Infineon production. Confirm RoHS compliance status and check for obsolescence notices, as availability may be limited. Ensure the ordering part number matches the exact gain bin required for your design specifications before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a moderate gain NPN transistor is needed for low-power switching or linear amplification. The 160-400 hFE bin provides tighter tolerance than standard bins. Consider the 250 mW thermal limit and ensure adequate PCB copper area for heat dissipation in the SOT-23-3 package during continuous operation.

Single Bipolar Transistors Part Context

This device belongs to the BC817 family of small-signal NPN transistors. The -25 suffix typically denotes a specific DC current gain binning category. While similar to other variants like BC817K, the specific gain characteristics and manufacturer sourcing differ. It serves as a common replacement for legacy discrete NPN designs requiring moderate current handling capabilities.

Single Bipolar Transistors Replacement Considerations

BC817-25

Single Bipolar Transistors FAQ

What is the DC current gain range for this specific variant?

The BC817-25 variant specifies a DC current gain (hFE) range of 160 to 400.

What is the maximum power dissipation rating?

The maximum power dissipation (Pd) is rated at 250 mW.