BC 846A E6327

Single Bipolar Transistors Overview

The BC 846A E6327 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SC-74-6 package containing two isolated transistors. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 65 V, and a collector-base voltage (VCBO) of 80 V. The device features a maximum emitter-base voltage (VEBO) of 6 V, a power dissipation of 250 mW, and a transition frequency (fT) of 250 MHz. Operating temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Dual NPN configuration within a single compact surface-mount package
• High gain bandwidth product suitable for radio frequency applications
• Extended operating temperature range for robust performance

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications in low-power electronics
• Radio frequency signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E6327' against official Infineon documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the component matches the SC-74-6 footprint requirements for your PCB design. Cross-reference part numbers such as BC846AE6327XT or BC846AE6327HTSA1 for accurate identification during sourcing.

Single Bipolar Transistors Selection Notes

Select this component when a dual NPN BJT with high voltage tolerance is required in a minimal footprint. The 65 V VCEO rating exceeds standard 50 V variants, offering higher headroom. The 250 MHz fT supports high-frequency operation. Compare against BC846B or BC846C if specific hFE binning is not critical for the application.

Single Bipolar Transistors Part Context

This part belongs to the BC846 series of NPN silicon transistors designed for general-purpose use. The 'A' designation typically indicates a specific DC current gain (hFE) binning range defined by Infineon. The E6327 suffix denotes the specific ordering code associated with the SC-74-6 surface-mount package and reel packaging format.

Single Bipolar Transistors Replacement Considerations

Official substitutes may include BC846B E6327 or BC846C E6327 for different gain characteristics. Other compatible packages include SOT-323 or SOT-23 variants if pinout compatibility allows. Verify that alternative parts meet the 65 V VCEO and 250 mW Pd requirements.