BC 846A E6433

Single Bipolar Transistors Overview

The BC846AE6433 is a small signal NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 65 V. The device has a minimum DC current gain (hFE) of 110 and operates at a maximum junction temperature of 150 °C. It is housed in a SOT-23-3 surface-mount package with a power dissipation rating of 0.25 W.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for general-purpose switching applications
• High breakdown voltage capability up to 65 V
• Surface-mount SOT-23-3 packaging for automated assembly

Single Bipolar Transistors Applications

• General purpose switching circuits
• Signal amplification stages
• Driver circuits for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as Siemens was acquired by Infineon. Confirm the specific suffix E6433 matches the required reel quantity and tape-and-reel specifications. Ensure the component meets RoHS compliance standards if required by the target application environment.

Single Bipolar Transistors Selection Notes

Select this component when a higher collector-emitter voltage than standard 30V transistors is required. The 65V rating provides headroom for noisy environments. Compare against BC847 or BC848 variants only if voltage requirements differ significantly.

Single Bipolar Transistors Part Context

This part belongs to the BC846 series of small signal NPN transistors. It is historically associated with Siemens before the company's semiconductor division became Infineon. The E6433 suffix typically denotes the specific packaging and reel configuration used for surface-mount technology production lines.

Single Bipolar Transistors Replacement Considerations

BC846AWE6433 is a verified equivalent part number from the same manufacturer family.