BC 847B B5003

Single Bipolar Transistors Overview

The BC847B is an NPN general-purpose transistor housed in a SOT-23 plastic package. It features a maximum collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 6 V. The device has a power dissipation of 325 mW and a gain-bandwidth product (fT) of 100 MHz. Operating temperatures range from -55 °C to +150 °C, with a DC collector/base gain (hFE) minimum of 200.

Single Bipolar Transistors Feature Summary

• NPN bipolar junction transistor designed for low current applications
• Low voltage operation capability suitable for general purpose switching
• Surface mount construction in a compact SOT-23 package

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplification stages
• Complementary PNP applications using BC857 series

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as BC847B is a standard JEDEC part number produced by multiple vendors including NXP, onsemi, and Rohm. Confirm that the specific suffix or marking corresponds to Infineon's internal designation if applicable, though Infineon is not a primary listed source for this exact part number in public datasheets. Ensure RoHS compliance matches project requirements.

Single Bipolar Transistors Selection Notes

Select based on required hFE binning and voltage ratings. The BC847B offers a 45 V VCEO rating, which is lower than the generic BC847 (65 V), making it suitable for specific low-voltage logic interfaces. Consider thermal management for the 325 mW power dissipation limit in dense PCB layouts.

Single Bipolar Transistors Part Context

The BC847B belongs to the widely used BC847 family of small-signal NPN transistors. It serves as the NPN complement to the BC857B PNP transistor. The 'B' suffix typically denotes a specific hFE gain range (minimum 200). This component is a staple in consumer electronics and industrial control boards for signal processing tasks.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC847B from NXP Semiconductors, onsemi, and Rohm. For higher voltage requirements, consider the BC847 (65 V VCEO). For complementary PNP needs, use BC857B.