Single Bipolar Transistors BC 850BF E6327 product image

BC 850BF E6327

$0.02
  • Description:TRANS NPN 45V 0.1A PG-SOT23
  • Series:-

SKU:390137b78e69 Category: Brand:

  
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BC 850BF E6327 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS NPN 45V 0.1A PG-SOT23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC 850BF E6327

  • Description:TRANS NPN 45V 0.1A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC 850BF E6327

BC 850BF E6327

Single Bipolar Transistors Overview

The BC 850BF E6327 is a single NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package designed for general-purpose amplification and switching applications. The device supports a maximum continuous DC collector current of 100 mA with a power dissipation rating of 330 mW. Key electrical limits include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. The component operates within a temperature range of -65°C to +150°C and features a transition frequency (fT) of 250 MHz.

Single Bipolar Transistors Feature Summary

  • Single NPN silicon bipolar junction transistor configured for general-purpose use
  • Surface-mount SOT-23-3 package optimized for automated assembly
  • High thermal stability supporting operation up to 150°C junction temperature

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Electronic switching applications
  • Low-power analog circuit design

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BF' against official Infineon documentation to confirm binning or gain classification differences compared to standard variants like 'B'. Confirm availability status as related BC850 series components may face obsolescence. Ensure the ordering part number matches the exact datasheet revision required for your design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a small-form-factor NPN BJT is required for low-current amplification tasks. The SOT-23-3 package facilitates compact PCB layouts. Consider the 45 V VCEO rating for low-voltage logic interfacing. Verify that the hFE gain band associated with the 'BF' suffix meets the specific circuit requirements for beta consistency.

Single Bipolar Transistors Part Context

This component belongs to the BC850 series of small-signal NPN transistors produced by Infineon Technologies. The series is characterized by high current gain and low saturation voltages, making it suitable for efficient switching and linear amplification in consumer and industrial electronics. The 'E6327' suffix typically denotes the specific tape-and-reel packaging configuration used for mass production.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

BC 850BF E6327BC 850BF E6327
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