BC 856A E6327

Description：TRANS PNP 65V 0.1A PG-SOT23
Series：-

SKU:b7e1541ff5bf Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

BC 856A E6327 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS PNP 65V 0.1A PG-SOT23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC 856A E6327

Description：TRANS PNP 65V 0.1A PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：65 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
Power - Max：330 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC 856A E6327

BC 856A E6327

Single Bipolar Transistors Overview

The BC 856A E6327 is a general-purpose NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and supports a maximum continuous collector current of 100 mA with a collector-emitter voltage rating of 45 V. The device features a DC current gain (hFE) range of 200 to 450, ensuring consistent amplification performance across the A-bin classification. It operates within a temperature range of -65°C to +150°C and dissipates up to 330 mW of power.

Single Bipolar Transistors Feature Summary

Utilizes silicon planar technology for robust general-purpose switching and amplification applications.
Provides high DC current gain consistency through strict binning specifications for the A-grade variant.
Designed for surface-mount assembly using the compact SOT-23-3 footprint.

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Electronic switching applications
Low-power analog processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix E6327 to confirm tape-and-reel packaging quantities and manufacturer lot codes. Confirm RoHS compliance status via the official datasheet before integration. Check for end-of-life notifications or discontinuation notices from Infineon to ensure long-term supply availability for production planning.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate gain and low voltage ratings is required. The A-bin gain specification suits designs needing predictable amplification without extensive sorting. Ensure the application voltage remains below 45 V and current stays within 100 mA limits to maintain reliability.

Single Bipolar Transistors Part Context

This part belongs to the BC856 series of small-signal NPN transistors. The 'A' designation indicates a specific gain bin, distinguishing it from other variants like BC856B or BC856C which offer different hFE ranges. The E6327 suffix identifies the specific packaging and handling configuration provided by Infineon.