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BC 856B E6327 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRANS PNP 65V 0.1A PG-SOT23. Review the specifications below when checking this part for your BOM.
The BC856BE6327 is a silicon PNP bipolar junction transistor from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device supports a power dissipation of 330 mW and operates within a temperature range of -65 °C to +150 °C. It meets AEC-Q100 automotive qualification standards.
Verify the specific hFE binning code (B) against design requirements, as this variant offers a distinct DC current gain range compared to other BC856 subtypes. Confirm that the SOT-23-3 footprint matches the target PCB layout. Ensure compliance with RoHS directives if required by the end application. Check for any obsolescence notices or lifecycle status updates directly from Infineon before finalizing procurement plans.
Select this component when a PNP transistor with moderate voltage ratings and high current gain is needed for space-constrained designs. The SOT-23-3 package provides a compact solution for surface-mount assembly. Consider the specific hFE range associated with the 'B' suffix to ensure compatibility with biasing networks. Verify thermal management capabilities given the 330 mW power dissipation limit in enclosed spaces.
This part belongs to the BC856 series of general-purpose PNP transistors manufactured by Infineon Technologies. The series is widely used in consumer and industrial electronics for switching and amplification tasks. The E6327 suffix indicates a specific tape-and-reel packaging configuration suitable for automated surface-mount production lines.
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, the component is qualified according to the AEC-Q100 standard.
The device operates within a temperature range of -65 °C to +150 °C.
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