BC108B PBFREE

Single Bipolar Transistors Overview

The BC108B PBFREE is a small signal NPN silicon transistor manufactured by Central Semiconductor Corp using an epitaxial planar process. It operates in a through-hole TO-206AA (TO-18) metal can package. Key electrical parameters include a collector-emitter voltage of 25 V, a collector current of 200 mA, and a power dissipation of 600 mW. The device features a gain bandwidth product of 150 MHz, a collector-base voltage of 30 V, and an emitter-base voltage of 5 V. Operating temperatures range from -65°C to +200°C junction temperature.

Single Bipolar Transistors Feature Summary

• Epitaxial planar construction for reliable small signal amplification
• High frequency performance with 150 MHz gain bandwidth product
• Robust thermal management supporting up to 200°C junction temperature

Single Bipolar Transistors Applications

• General purpose small signal amplification
• Switching applications requiring low voltage operation
• Audio frequency circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'PBFREE' confirms lead-free compliance when sourcing. Confirm the TO-18 metal can package dimensions match your PCB footprint requirements. Ensure the 200 mA collector current rating aligns with your circuit's maximum load demands. Check that the 600 mW power dissipation limit is sufficient for your thermal environment without additional heatsinking.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a standard NPN small signal transistor with high-frequency capabilities. The TO-18 package offers durability for harsh environments compared to plastic alternatives. Consider the 25 V voltage rating as a constraint for low-voltage logic interfacing. The 150 MHz transition frequency makes it suitable for RF pre-amplification stages where moderate gain is required.

Single Bipolar Transistors Part Context

This part belongs to the BC107/BC108/BC109 series of small signal NPN transistors. These devices are designed for general-purpose amplification and switching tasks. The series utilizes silicon epitaxial planar technology to ensure consistent electrical characteristics across production batches. They serve as foundational discrete components in analog circuit design.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not provided in the available documentation. Verify pinout compatibility if considering alternative manufacturers. Ensure replacement devices meet or exceed the 25 V VCEO and 200 mA IC specifications.