Single Bipolar Transistors BC108B TIN/LEAD product image

BC108B TIN/LEAD

$1.11
  • Description:25V 200MA 600MW TH TRANSISTOR-SM
  • Series:BC108

SKU:318e9b825506 Category: Brand:

  
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BC108B TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 25V 200MA 600MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC108B TIN/LEAD

  • Description:25V 200MA 600MW TH TRANSISTOR-SM
  • Series:BC108
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:600 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC108B TIN/LEAD

BC108B TIN/LEAD

Single Bipolar Transistors Overview

The BC108B TIN/LEAD is an NPN silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 45 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 200 mA with a power dissipation rating of 300 mW. DC current gain (hFE) ranges from 100 to 500 at specified test conditions, and the transition frequency (fT) is 280 MHz.

Single Bipolar Transistors Feature Summary

  • NPN silicon construction for reliable switching and amplification
  • High DC current gain suitable for low-level signal processing
  • Wide operating temperature range for diverse environmental conditions

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications in consumer electronics
  • Low-frequency signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TIN/LEAD' against official datasheets to confirm lead composition and RoHS status, as regulatory compliance varies by manufacturer batch. Confirm the package type matches design requirements. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate current handling and high gain is required. Ensure the circuit design accommodates the 300 mW power dissipation limit. Verify that the TO-92-3 package fits the PCB layout constraints. Compare hFE ranges against application needs to determine if binning or selection is necessary for consistent performance.

Single Bipolar Transistors Part Context

This component belongs to the BC108 series of small-signal NPN transistors produced by Central Semiconductor. The series is designed for general-purpose use in audio and RF amplification. The BC108B variant specifically denotes a particular gain bin within the family, offering higher current gain compared to lower-lettered variants.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching VCEO, IC, and package specifications. Verify pinout compatibility and thermal characteristics before replacing.

BC108B TIN/LEADBC108B TIN/LEAD
$1.11
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