BC182_J35Z

$0.03

Description：TRANS NPN 50V 0.1A TO-92-3
Series：-

SKU:fa0460acfc84 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

BC182_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC182_J35Z

Description：TRANS NPN 50V 0.1A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 2mA, 5V
Power - Max：350 mW
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC182_J35Z

BC182_J35Z

Single Bipolar Transistors Overview

The BC182_J35Z is a general-purpose NPN silicon bipolar junction transistor manufactured by onsemi. It utilizes a TO-92-3 Kinked Lead through-hole package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a maximum collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 350 mW. It features a transition frequency (fT) of 150 MHz and a minimum DC current gain (hFE) of 80. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

NPN polarity configuration for single-ended amplification and switching applications
Silicon planar epitaxial construction for stable performance
Through-hole mounting capability via TO-92-3 kinked lead form factor

Single Bipolar Transistors Applications

General purpose signal amplification
Low-frequency switching circuits
Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm pinout orientation and binning classification. Confirm end-of-life status as similar BC182 variants are discontinued. Ensure the procurement source provides valid traceability for the silicon material and manufacturing origin. Cross-reference datasheet revisions to ensure compatibility with existing design constraints.

Single Bipolar Transistors Selection Notes

Select this component for low-power analog applications requiring moderate voltage handling and standard current gain. Compare hFE bins if precise amplification factors are critical for the circuit design. Evaluate thermal management requirements given the 350 mW dissipation limit in the TO-92 package. Consider alternative packages if surface-mount technology is required for the assembly process.

Single Bipolar Transistors Part Context

This part belongs to the BC182 series of small-signal NPN transistors. It shares functional similarities with other members like BC182L and BC182C, differing primarily in gain binning and packaging suffixes. The series is widely used in consumer electronics and industrial control boards for basic signal processing tasks.