Single Bipolar Transistors BC182L_J35Z product image

BC182L_J35Z

$0.03
  • Description:TRANS NPN 50V 0.1A TO-92-3
  • Series:-

SKU:1c138d69db58 Category: Brand:

  
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BC182L_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC182L_J35Z

  • Description:TRANS NPN 50V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC182L_J35Z

BC182L_J35Z

Single Bipolar Transistors Overview

The BC182L_J35Z is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. The device has a transition frequency of 150 MHz and a maximum power dissipation of 350 mW. DC current gain (hFE) is specified with a minimum value of 64 at 10 µA base current and 5 V collector-emitter voltage. The component utilizes a TO-92-3 through-hole package and operates within a junction temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

  • NPN silicon small-signal transistor configuration
  • Low noise performance characteristics
  • Through-hole mounting capability

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications
  • Audio signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against the official onsemi datasheet to confirm pinout orientation and binning specifications. Confirm RoHS compliance status for the specific manufacturing lot. Check part availability as distribution status may vary. Ensure the ordering code matches the required hFE gain bin for the intended application design.

Single Bipolar Transistors Selection Notes

Select this component when a low-noise NPN transistor with moderate current handling is required. The BC182L variant offers higher current gain compared to standard BC182B versions. Verify that the 100 mA collector current limit and 50 V voltage rating suit the circuit requirements. Consider the TO-92 package size for board space constraints.

Single Bipolar Transistors Part Context

This component belongs to the BC182 family of NPN transistors produced by onsemi. The BC182 series is widely used in general-purpose electronic designs. The 'L' suffix typically denotes a specific gain grouping, distinguishing it from other variants like the BC182B or BC182C which have different minimum hFE thresholds.

Single Bipolar Transistors Replacement Considerations

BC182B_J35Z

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the BC182L_J35Z?

The minimum DC current gain (hFE) is 64, measured at a base current of 10 µA and a collector-emitter voltage of 5 V.

What is the maximum power dissipation of this transistor?

The maximum power dissipation is 350 mW.

Is the BC182L_J35Z suitable for high-frequency applications?

Yes, it has a transition frequency (fT) of 150 MHz, making it suitable for certain RF and audio frequency applications.

BC182L_J35ZBC182L_J35Z
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