Single Bipolar Transistors BC183C_J35Z product image

BC183C_J35Z

$0.03
  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-

SKU:57f98eb94ac4 Category: Brand:

  
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BC183C_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC183C_J35Z

  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC183C_J35Z

BC183C_J35Z

Single Bipolar Transistors Overview

The BC183C_J35Z is an NPN silicon small-signal transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device exhibits a transition frequency of 150 MHz and a DC current gain (hFE) of at least 120 when tested at 2 mA and 5 V. Power dissipation is rated at 350 mW, with a saturation voltage of 600 mV at 5 mA base and 100 mA collector currents. It operates within a junction temperature range of -55°C to 150°C and utilizes a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

  • NPN bipolar junction transistor configuration for general-purpose amplification
  • High-frequency performance capability suitable for RF applications
  • Low noise operation characteristics
  • Through-hole mounting compatibility

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Switching applications
  • RF signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm packaging and tape-and-reel specifications. Confirm component status as discontinued or obsolete prior to procurement planning. Ensure substitution strategies account for potential availability constraints and verify that alternative sources maintain identical electrical parameters and pin configurations.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring low-voltage NPN switching or amplification with moderate current handling. Evaluate thermal management requirements given the 350 mW power dissipation limit in the TO-92 package. Consider the 150 MHz transition frequency for high-speed signal integrity. Verify that the required hFE range meets circuit biasing needs without excessive variation.

Single Bipolar Transistors Part Context

This part belongs to the BC183 series of NPN transistors produced by onsemi. It shares functional similarities with other small-signal NPN devices but is distinguished by its specific voltage and current ratings. The BC183 series is commonly used in consumer electronics and industrial control systems where reliable low-power switching is required.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer cross-reference guides for equivalent components.

BC183C_J35ZBC183C_J35Z
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