BC184L_J35Z

Single Bipolar Transistors Overview

The onsemi BC184L_J35Z is a small-signal NPN silicon transistor housed in a TO-92 package. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 30 V. The device includes a minimum DC current gain (hFE) of 160, ensuring high amplification capability for low-power applications. It operates within a junction temperature range up to 150 °C and offers a collector-base capacitance of 5 pF.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for sensitive signal amplification
• Low collector-base capacitance for efficient switching performance
• Robust thermal stability with a high maximum junction temperature rating

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring low power consumption
• Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official datasheets to confirm binning or gain grouping requirements. Ensure the ordering part number matches the exact manufacturer specifications for the intended electrical characteristics. Cross-reference the package type and pinout configuration before integration into printed circuit board designs.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate current handling and high gain is required. Consider the TO-92 package constraints for thermal management and physical space. Evaluate the 30 V breakdown voltage limit against the circuit's maximum operating voltage to ensure reliable operation under all conditions.

Single Bipolar Transistors Part Context

This component belongs to the BC184 series of general-purpose NPN transistors manufactured by onsemi. These devices are widely used in consumer electronics and industrial control systems where reliable small-signal processing is necessary. The series provides a balance of performance and cost-effectiveness for mass production environments.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN transistors with matching current and voltage ratings. Verify that alternative components meet the same hFE binning and package dimensions to maintain circuit compatibility without redesign.