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BC212B_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 50V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for BC212B_J35Z
- Description：TRANS PNP 50V 0.1A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 2mA, 5V
- Power - Max：350 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
Single Bipolar Transistors datasheet and documents for BC212B_J35Z
Single Bipolar Transistors Overview
The BC212B_J35Z is a PNP silicon small-signal bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device utilizes a TO-92 (TO-226AA) plastic package with three leads. It provides a minimum DC current gain (hFE) of 60, ensuring reliable amplification performance for general-purpose applications.
Single Bipolar Transistors Feature Summary
- PNP polarity configuration for complementary circuit designs
- Small-signal capability suitable for low-power switching and amplification
- Through-hole mounting via standard TO-92 leaded package
Single Bipolar Transistors Applications
- General-purpose signal amplification circuits
- Complementary pairs in audio pre-amplifiers
- Low-current switching applications
Single Bipolar Transistors Procurement Notes
Verify the manufacturer marking and date code against official onsemi documentation to confirm authenticity. Ensure the part number suffix matches the specific binning or packaging requirements. Cross-reference the datasheet specifications with the design constraints before finalizing procurement orders.
Single Bipolar Transistors Selection Notes
Select this component when a PNP transistor with 50V breakdown and 100mA continuous current capacity is required. The TO-92 package is appropriate for prototyping and low-volume through-hole assemblies. Verify that the hFE range meets the specific gain requirements of the target amplifier stage.
Single Bipolar Transistors Part Context
This component belongs to the BC182/BC212 series of small-signal transistors. The BC212 variant specifically denotes the PNP counterpart to the NPN BC182. Both are widely used in consumer electronics and industrial control systems for basic signal processing tasks requiring moderate voltage and current handling.
Single Bipolar Transistors Replacement Considerations
- BC212RLRE
- BC212BRL1
Single Bipolar Transistors FAQ
What is the maximum collector-emitter voltage for the BC212B_J35Z?
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
Is the BC212B_J35Z an NPN or PNP transistor?
It is a PNP silicon small-signal transistor.
What is the minimum DC current gain specified for this part?
The minimum DC current gain (hFE) is specified as 60.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
